Перегляд за автором "Gal’chinetskii, L."

Сортувати за: Порядок: Результатів:

  • On proportionality of the light output of semiconductor scintillators under irradiation by alpha-particles and heavy ions 
    Ryzhikov, V.; Klamra, W.; Starzhinskiy, N.; Gal’chinetskii, L.; Silin, V.; Lisetski, L.; Danshin, E.; Kapusta, M.; Szawlowski, M.; Katrunov, K.; Chernikov, V.; Tarasov, V.; Balcerzyk, M.; Moszyński, M. (Вопросы атомной науки и техники, 2004)
    In the energy range E =2.8...42.2 MeV, the light output S was measured for ZnSe-based scintillators under irradiation with α- particles and heavy ions 81Br. Under such irradiation, the proportionality S(Еα,i) is observed ...
  • On the optimum geometric shapes of ZnSe-based scintillation elements 
    Katrunov, K.; Naydenov, S.; Ryzhikov, V.; Starzhinskiy, N.; Gal’chinetskii, L.; Gavril’uk, V.; Yanovsky, V. (Вопросы атомной науки и техники, 2004)
    We have carried out Monte-Carlo calculations of the light collection coefficient τ for different shapes of ZnSebased scintillators Applying a theoretical model, it has been shown, that the light collection optimization can ...
  • Radiation effects in semiconductor scintillators based on zinc selenide 
    Ryzhikov, V.; Koshkin, V.; Starzhinskiy, N.; Ibragimova, E.; Gafarov, A.; Kist, A.; Oksengendler, B.; Gal’chinetskii, L.; Katrunov, K.; Galkin, S.; Silin, V. (Вопросы атомной науки и техники, 2003)
    Effects have been studied of gamma-radiation (Еγ=1.25 МeV) in doses of DγЈ5.10⁹ rad upon light output and spectral-kinetic luminescence characteristics of new semiconductor scintillators (SCS) based on isovalently doped ...